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Core structures and kink migrations of partial dislocations in 4H-SiC

journal contribution
posted on 2023-06-08, 05:51 authored by Gianluca Savini, Malcolm I Heggie, Sven Öberg
First-principles calculations are used to investigate the Shockley partial dislocations in 4H-SiC. We show that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically active. In particular, the Si(g) 30° partials can explain the optical activation energy for the dislocation glide at ~2.4 eV above the VB, the narrow peak at 2.87 eV and the broadband at ~1.8 eV found in photoluminescence spectra. Further, we propose a new model to explain the stability of the symmetric reconstructions and the enhancement of the dislocation velocity in SiC. © The Royal Society of Chemistry.

History

Publication status

  • Published

Journal

Faraday Discussions

ISSN

1359-6640

Publisher

RSC Publishing

Issue

-

Volume

134

Page range

353-357

Pages

14.0

Department affiliated with

  • Chemistry Publications

Notes

GS planned the work, carried out the computer simulations and interpreted the results. GS is the main and corresponding author.

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

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