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Partial dislocations under forward bias in SiC

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posted on 2023-06-08, 06:04 authored by G Savini, A A El-Barbary, M I Heggie, Sven Öberg
First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We have shown that the Peierls barriers are strongly dependent on the dislocation core structures. Our results have revealed that the asymmetric reconstruction does not possess midgap states while the symmetric reconstructions, characterized by dangling bond on like atoms along the dislocation line, are always electrically active. We suggested that under forward bias, the free energies of the symmetric reconstructions are dynamically lowered by continuous electron-hole transitions between the respective deep levels and valence/conduction bands.

History

Publication status

  • Published

ISSN

02555476

Volume

556-55

Page range

279-282

Presentation Type

  • paper

Event name

6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006

Event type

conference

Department affiliated with

  • Chemistry Publications

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

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