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Partial dislocations under forward bias in SiC
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posted on 2023-06-08, 06:04 authored by G Savini, A A El-Barbary, M I Heggie, Sven ÖbergFirst-principles calculations are used to investigate the partial dislocations in 4H-SiC. We have shown that the Peierls barriers are strongly dependent on the dislocation core structures. Our results have revealed that the asymmetric reconstruction does not possess midgap states while the symmetric reconstructions, characterized by dangling bond on like atoms along the dislocation line, are always electrically active. We suggested that under forward bias, the free energies of the symmetric reconstructions are dynamically lowered by continuous electron-hole transitions between the respective deep levels and valence/conduction bands.
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Publication status
- Published
ISSN
02555476Volume
556-55Page range
279-282Presentation Type
- paper
Event name
6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006Event type
conferenceDepartment affiliated with
- Chemistry Publications
Full text available
- No
Peer reviewed?
- Yes
Legacy Posted Date
2012-02-06Usage metrics
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