Silica thin films containing Si nanocrystals and Er3+ were prepared by ion implantation. Excess Si concentrations ranged from 5% to 15%; Er3+ concentration for all samples was 0.5%. Samples exhibited photoluminescence at 742 nm (attributed to Si nanocrystals), 654 nm (defects due to Er3+ implantation), and at 1.53 μm (intra-4f transitions). Photoluminescence intensity at 1.53 μm increased ten times by incorporating Si nanocrystals. Strong, broad photoluminescence at 1.53 μm was observed for λPump away from Er3+ absorption peaks, implying energy transfer from Si nanocrystals. Erbium fluorescence lifetime decreased from 4 ms to 1 ms when excess Si increased from 5% to 15%, suggesting that at high Si content Er3+ ions are primarily situated inside Si nanocrystals.

Composites with silver nanoparticles have been prepared by ion implantation in soda–lime glass at 60 keV to a dose of 7.0 × 1016 ion/cm2 at a current density of 10 μA/cm2. The silver profile distribution was determined by Rutherford backscattering spectroscopy. Optical properties of composites were characterized by reflectance measured from both the implanted and the rear face of the sample. For modelling of reflectivity spectra a multilayer structure was considered and a matrix method using complex Fresnel coefficients was applied. Dielectric permeabilities of composite layers were calculated using the Maxwell–Garnet effective medium theory. Quality agreement between theoretical and experimental reflectivity spectra was achieved by accounting for the non-uniform silver concentration distribution with depth in the implanted glass surface.