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Structure and energy of the 90° partial dislocations in wurtzite-GaN

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posted on 2023-06-07, 20:09 authored by G Savini, M I Heggie, C P Ewels, N Martsinovich, R Jones, A T Blumenau
90° Shockley partial dislocations in GaN are investigated by first-principles calculations. This work is focussed on the electrical properties of dislocation cores, and on investigating the electrical fields around these defects. The band structure analysis shows that both the a and ß core partials possess a midgap state. The ß-core dislocations give rise to a donor level Ev + 0.87 eV that might explain the absorption peak at 2.4 eV revealed by energy loss spectroscopy measurements. The acceptor level Ev + 1.11 eV localized at the a-core dislocations might contribute to the yellow luminescence. These dislocations experience a substantial charge polarization along the [0001] growth axis. In addition, we show that these dislocations tend to charge in a high stress field.

History

Publication status

  • Published

ISSN

02555476

Volume

483-48

Page range

1057-1060

Presentation Type

  • paper

Event name

5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004

Event location

Bologna; 31 August 2004 through 4 September 2004; Code 70376

Event type

conference

ISBN

978-087849963-2

Department affiliated with

  • Chemistry Publications

Notes

Published in: Materials Science Forum

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

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