Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films

Chryssou, C E, Kenyon, A J, Iwayama, T S, Pitt, C W and Hole, D E (1999) Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films. Applied Physics Letters, 75 (14). pp. 2011-2013. ISSN 0003-6951

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Abstract

Silica thin films containing Si nanocrystals and Er3+ were prepared by ion implantation. Excess Si concentrations ranged from 5% to 15%; Er3+ concentration for all samples was 0.5%. Samples exhibited photoluminescence at 742 nm (attributed to Si nanocrystals), 654 nm (defects due to Er3+ implantation), and at 1.53 μm (intra-4f transitions). Photoluminescence intensity at 1.53 μm increased ten times by incorporating Si nanocrystals. Strong, broad photoluminescence at 1.53 μm was observed for λPump away from Er3+ absorption peaks, implying energy transfer from Si nanocrystals. Erbium fluorescence lifetime decreased from 4 ms to 1 ms when excess Si increased from 5% to 15%, suggesting that at high Si content Er3+ ions are primarily situated inside Si nanocrystals.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Depositing User: Dave Hole
Date Deposited: 06 Feb 2012 19:03
Last Modified: 17 Sep 2012 14:24
URI: http://srodev.sussex.ac.uk/id/eprint/19208
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