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Core structures and kink migrations of partial dislocations in 4H-SiC
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posted on 2023-06-08, 05:51 authored by Gianluca Savini, Malcolm I Heggie, Sven ÖbergFirst-principles calculations are used to investigate the Shockley partial dislocations in 4H-SiC. We show that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically active. In particular, the Si(g) 30° partials can explain the optical activation energy for the dislocation glide at ~2.4 eV above the VB, the narrow peak at 2.87 eV and the broadband at ~1.8 eV found in photoluminescence spectra. Further, we propose a new model to explain the stability of the symmetric reconstructions and the enhancement of the dislocation velocity in SiC. © The Royal Society of Chemistry.
History
Publication status
- Published
Journal
Faraday DiscussionsISSN
1359-6640Publisher
RSC PublishingExternal DOI
Issue
-Volume
134Page range
353-357Pages
14.0Department affiliated with
- Chemistry Publications
Notes
GS planned the work, carried out the computer simulations and interpreted the results. GS is the main and corresponding author.Full text available
- No
Peer reviewed?
- Yes
Legacy Posted Date
2012-02-06Usage metrics
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