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Hydrogen Interaction with Dislocations in Si

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journal contribution
posted on 2023-06-08, 06:21 authored by C P Ewels, S Leoni, M I Heggie, P Jemmer, E Hernandez, R Jones, P R Briddon
An H plasma has a remarkable effect on dislocation mobility in silicon, reducing its activation energy to 1.2 eV. Applying density functional theory to the interactions of H and H? With the core of the 90 degrees partial dislocation in Si, we have identified a path for motion involving kink formation and migration at hydrogenated core bonds which conforms exactly to the experimentally measured activation energy

History

Publication status

  • Published

File Version

  • Published version

Journal

Physical Review Letters

ISSN

0031-9007

Publisher

Physical Review Letters

Issue

4

Volume

84

Page range

690 - 693

ISBN

0031-9007

Department affiliated with

  • Chemistry Publications

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

First Open Access (FOA) Date

2016-03-22

First Compliant Deposit (FCD) Date

2016-08-17

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