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Deep nitrogen implantation for GaAs microstructuring using pulsed electrochemical etching

journal contribution
posted on 2023-06-08, 07:52 authored by Jianmin Miao, Hans L Hartnagel, Bernard L Weiss
We present deep ion implantation technology to fabricate the GaAs microstructures for microelectromechanical systems applications. 630 keV and 4 MeV nitrogen ions were used to implant deeply into an n-type GaAs substrate with doses of 2x10(14) and 1x10(15) cm(-2), respectively. The resistivity and I/V characteristics of implanted n-GaAs have been investigated as a function of the annealing temperature. The results demonstrate that the implanted n-GaAs surface layer annealed at 600 degreesC has the highest resistivity and maximum breakdown voltage. This layer is a semi-insulating layer and has a thickness of 1 and 2.5 mum for implantation with 630 keV and 4 MeV nitrogen ions, respectively. Deep-level transient spectroscopy measurement reveals that the EL2 trap contributes to the formation of semi-insulating GaAs layers. Rutherford backscattering measurements show that there is no significant crystalline damage in the nitrogen implanted GaAs layer. A pulsed electrochemical etching process has been developed to selectively remove n-GaAs, leaving the top patterned semi-insulating GaAs layer as mechanical microstructures. Using this technique, GaAs microstructures, such as cantilevers and cross bridges, have been successfully fabricated.

History

Publication status

  • Published

Journal

Journal of Applied Physics

ISSN

0021-8979

Publisher

American Institute of Physics

Issue

5

Volume

92

Page range

2923-2928

Department affiliated with

  • Engineering and Design Publications

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

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