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Scanning electron microscopy of dopant distribution in semiconductors
journal contribution
posted on 2023-06-08, 08:24 authored by P G Merli, V Morandi, G Savini, M Ferroni, G SberveglieriWe show that, in scanning electron microscopy, it is possible to use the secondary electrons produced by the backscattered electrons to obtain chemical information on the dopant distribution in Sb-implanted silicon. Theoretical investigations and experimental data concur to point out that the resolution of the method is defined by the probe size—values of 1 nm or even lower are possible in the present instruments—while the contrast depends on the electron range and on the boundary conditions. A proper choice of beam energy and boundaries of the doped layer may allow a sensitivity below 1%, suitable to characterize the high-dose near-surface region of the ultrashallow junctions in cross-sectioned bulk specimens.
History
Publication status
- Published
Journal
Applied Physics LettersISSN
0003-6951Publisher
American Institute of PhysicsExternal DOI
Issue
10Volume
86Page range
101916Department affiliated with
- Chemistry Publications
Notes
A characterization of the doping profile in silicon using the electron microscope technique. GS carried out computer simulations to predict the optimal sample/probe distance for the best image resolutions. GS is corresponding author.Full text available
- No
Peer reviewed?
- Yes
Legacy Posted Date
2012-02-06Usage metrics
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