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Scanning electron microscopy of dopant distribution in semiconductors

journal contribution
posted on 2023-06-08, 08:24 authored by P G Merli, V Morandi, G Savini, M Ferroni, G Sberveglieri
We show that, in scanning electron microscopy, it is possible to use the secondary electrons produced by the backscattered electrons to obtain chemical information on the dopant distribution in Sb-implanted silicon. Theoretical investigations and experimental data concur to point out that the resolution of the method is defined by the probe size—values of 1 nm or even lower are possible in the present instruments—while the contrast depends on the electron range and on the boundary conditions. A proper choice of beam energy and boundaries of the doped layer may allow a sensitivity below 1%, suitable to characterize the high-dose near-surface region of the ultrashallow junctions in cross-sectioned bulk specimens.

History

Publication status

  • Published

Journal

Applied Physics Letters

ISSN

0003-6951

Publisher

American Institute of Physics

Issue

10

Volume

86

Page range

101916

Department affiliated with

  • Chemistry Publications

Notes

A characterization of the doping profile in silicon using the electron microscope technique. GS carried out computer simulations to predict the optimal sample/probe distance for the best image resolutions. GS is corresponding author.

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2012-02-06

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