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Barnett, A M, Lees, J E, Bassford, D J and Ng, J S (2012) A varied shaping time noise analysis of Al0.8Ga0.2As and GaAs soft X-ray photodiodes coupled to a low-noise charge sensitive preamplifier. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 673. pp. 10-15. ISSN 0168-9002
Full text not available from this repository.Abstract
The noise sources affecting Al0.8Ga0.2As and GaAs spectroscopic X-ray photon counting p+–i–n+ photodiodes connected to a custom low-noise charge sensitive preamplifier are quantified by analysing the system's response to pulses from a signal generator and varying the system's shaping amplifier's shaping time (from 0.5 μs to 10 μs). The system is investigated at three temperatures (−10 °C, +20 °C and +50 °C) in order to characterise the variation of the component noise sources and optimum shaping time with temperature for Al0.8Ga0.2As and GaAs diodes. The analysis shows that the system is primarily limited by dielectric noise, hypothesised to be mainly from the packaging surrounding the detector, for both types of diode and at each temperature.
| Item Type: | Article |
|---|---|
| Schools and Departments: | School of Engineering and Informatics > Engineering and Design |
| Subjects: | Q Science > QB Astronomy Q Science > QC Physics |
| Depositing User: | Anna Barnett |
| Date Deposited: | 18 Nov 2013 14:56 |
| Last Modified: | 18 Nov 2013 14:56 |
| URI: | http://srodev.sussex.ac.uk/id/eprint/47016 |