Determination of the electron-hole pair creation energy in Al0.8Ga0.2As

Barnett, A M, Lees, J E, Bassford, D J and Ng, J S (2012) Determination of the electron-hole pair creation energy in Al0.8Ga0.2As. Journal of Instrumentation, 7. P06016-P06016. ISSN 1748-0221

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The average energy consumed in the creation of an electron-hole pair (commonly called the electron-hole pair creation energy) in the compound semiconductor Al0.8Ga0.2As has been experimentally measured for the first time at X-ray energies using 55Fe and 109Cd radioisotope sources and a GaAs X-ray photodiode as a reference detector. The value measured (5.1 eV ± 0.08 eV at 294 K) is compared to values previously estimated in the literature. © 2012 IOP Publishing Ltd and Sissa Medialab srl.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Subjects: Q Science > QB Astronomy
Q Science > QC Physics
Depositing User: Anna Barnett
Date Deposited: 13 Nov 2013 13:44
Last Modified: 13 Nov 2013 13:46
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