X-ray and electron response of 4H-SiC vertical interdigitated Schottky photodiodes

Lees, J E, Barnett, A M, Bassford, D J and Mazzillo, M (2012) X-ray and electron response of 4H-SiC vertical interdigitated Schottky photodiodes. Journal of Instrumentation, 7. P11024-P11024. ISSN 1748-0221

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We report on the X-ray and electron performance of a low voltage reverse biased 4H-SiC vertical Schottky photodiode, based on the pinch-off surface effect, obtained by means of self-aligned Nickel Silicide (Ni2Si) interdigitated contacts. Although these photodiodes were original designed for UV detection their open Schottky contact is attractive for soft X-ray and low energy electron detection. The open electrode structure of the device allows the incident radiation to reach the active layer with minimal absorption. The photon counting spectroscopy response for soft X-rays is reported and compared to those predicted from a Monte Carlo model for SiC devices. We also show these devices can detect beta particles from 3H and 14C radioisotope sources with a combined energy range 1-156 keV. © 2012 IOP Publishing Ltd and Sissa Medialab srl.

Item Type: Article
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Subjects: Q Science > QB Astronomy
Q Science > QC Physics
Depositing User: Anna Barnett
Date Deposited: 13 Nov 2013 13:47
Last Modified: 13 Nov 2013 13:47
URI: http://srodev.sussex.ac.uk/id/eprint/47019
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