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Fabrication study of GaAs mesa diodes for X-ray detection
journal contribution
posted on 2023-06-08, 18:14 authored by J S Ng, X Meng, J E Lees, Anna BarnettAnna Barnett, C H TanA study of leakage currents using GaAs mesa p-i-n diodes for X-ray photon counting is presented. Different wet chemical etching solution and etch depth were used in the fabrication of these mesa diodes. Low and uniform leakage currents were achieved when the diode fabrication used (i) a combination of main etching solution and finishing etching solution for the etching, and (ii) partially etched mesas. The diodes fabricated using these methods showed well-defined X-ray peaks when illuminated with an 55Fe radioisotope source.
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Publication status
- Published
Journal
Journal of InstrumentationISSN
1748-0221Publisher
Institute of PhysicsExternal DOI
Volume
9Page range
T08005Department affiliated with
- Engineering and Design Publications
Full text available
- No
Peer reviewed?
- Yes
Legacy Posted Date
2014-09-09Usage metrics
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