Ng, J S, Meng, X, Lees, J E, Barnett, A and Tan, C H (2014) Fabrication study of GaAs mesa diodes for X-ray detection. Journal of Instrumentation, 9. T08005. ISSN 1748-0221

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Abstract

A study of leakage currents using GaAs mesa p-i-n diodes for X-ray photon counting is presented. Different wet chemical etching solution and etch depth were used in the fabrication of these mesa diodes. Low and uniform leakage currents were achieved when the diode fabrication used (i) a combination of main etching solution and finishing etching solution for the etching, and (ii) partially etched mesas. The diodes fabricated using these methods showed well-defined X-ray peaks when illuminated with an 55Fe radioisotope source.

Item Type:	Article
Schools and Departments:	School of Engineering and Informatics > Engineering and Design
Subjects:	Q Science > QB Astronomy Q Science > QC Physics
Depositing User:	Anna Barnett
Date Deposited:	09 Sep 2014 08:49
Last Modified:	09 Sep 2014 08:49
URI:	http://srodev.sussex.ac.uk/id/eprint/49811

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