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Flexible self-aligned amorphous InGaZnO thin-film transistors with submicrometer channel length and a transit frequency of 135 MHz
journal contribution
posted on 2023-06-08, 19:59 authored by Niko Munzenrieder, L Petti, C Zysset, T Kinkeldei, G A Salvatore, G TrosterFlexible large area electronics promise to enable new devices such as rollable displays and electronic skins. Radio frequency (RF) applications demand circuits operating in the megahertz regime, which is hard to achieve for electronics fabricated on amorphous and temperature sensitive plastic substrates. Here, we present self-aligned amorphous indium-gallium-zinc oxide-based thin-film transistors (TFTs) fabricated on free-standing plastic foil using fabrication temperatures . Self-alignment by backside illumination between gate and source/drain electrodes was used to realize flexible transistors with a channel length of 0.5 µm and reduced parasitic capacities. The flexible TFTs exhibit a transit frequency of 135 MHz when operated at 2 V. The device performance is maintained when the TFTs are bent to a tensile radius of 3.5 mm, which makes this technology suitable for flexible RFID tags and AM radios.
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Publication status
- Published
Journal
IEEE Transactions on Electron DevicesISSN
0018-9383Publisher
Institute of Electrical and Electronics Engineers (IEEE)External DOI
Issue
9Volume
60Page range
2815-2820Department affiliated with
- Engineering and Design Publications
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- No
Peer reviewed?
- Yes
Legacy Posted Date
2015-02-06Usage metrics
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