Lioliou, G, Mazzillo, M C, Sciuto, A and Barnett, A M (2015) Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes. Optics Express, 23 (17). pp. 21657-21670. ISSN 1094-4087

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Abstract

Fabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements as a function of applied voltage over the temperature range 20 °C – 120 °C are presented. The results show consistent performance among devices. Their leakage current density, at the highest investigated temperature (120 °C), is in the range of nA/cm2 at high internal electric field. Properties such as barrier height and ideality factor are also computed as a function of temperature. The responsivities of the diodes as functions of applied voltage were measured using a UV spectrophotometer in the wavelength range 200 nm - 380 nm and compared with theoretically calculated values. The devices had a mean peak responsivity of 0.093 A/W at 270 nm and −15 V reverse bias.

Item Type:	Article
Schools and Departments:	School of Engineering and Informatics > Engineering and Design
Subjects:	Q Science > QC Physics
Depositing User:	Grammatiki Lioliou
Date Deposited:	27 Jan 2016 07:40
Last Modified:	14 Mar 2017 06:30
URI:	http://srodev.sussex.ac.uk/id/eprint/59431

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