Lioliou, G, Meng, X, Ng, J S and Barnett, A M (2016) Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes. Journal of Applied Physics, 119 (12). ISSN 0021-8979

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Abstract

Electrical characterization of two GaAs p+-i-n+ mesa X-ray photodiodes over the temperature range 0 °C to 120 °C together with characterization of one of the diodes as an X-ray detector over the temperature range 0 °C to 60 °C is reported as part of the development of photon counting X-rayspectroscopic systems for harsh environments. The randomly selected diodes were fully etched and unpassivated. The diodes were 200 μm in diameter and had 7 μm thick i layers. The leakage current density was found to increase from (3 ± 1) nA/cm−2 at 0 °C to (24.36 ± 0.05) μA/cm−2 at 120 °C for D1 and from a current density smaller than the uncertainty (0.2 ± 1.2) nA/cm−2 at 0 °C to (9.39 ± 0.02) μA/cm−2 at 120 °C for D2 at the maximum investigated reverse bias (15 V). The best energy resolution (FWHM at 5.9 keV) was achieved at 5 V reverse bias, at each temperature; 730 eV at 0 °C, 750 eV at 20 °C, 770 eV at 40 °C, and 840 eV at 60 °C. It was found that the parallel white noise was the main source of the photopeak broadening only when the detector operated at 60 °C, at 5 V, 10 V, and 15 V reverse bias and at long shaping times (>5 μs), whereas the sum of the dielectricnoise and charge trapping noise was the dominant source of noise for all the other spectra.

Item Type:	Article
Schools and Departments:	School of Engineering and Informatics > Engineering and Design
Subjects:	Q Science > QB Astronomy Q Science > QC Physics
Depositing User:	Grammatiki Lioliou
Date Deposited:	30 Mar 2016 10:13
Last Modified:	24 Mar 2017 16:10
URI:	http://srodev.sussex.ac.uk/id/eprint/60157

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