Gohil, T, Whale, J, Lioliou, G, Novikov, S V, Foxon, C T, Kent, A J and Barnett, A M (2016) X-ray detection with zinc-blende (cubic) GaN Schottky diodes. Scientific Reports, 6. p. 29535. ISSN 2045-2322

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Abstract

The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At −5 V reverse bias, the capacitances of the diodes were measured to be (84.05 ± 0.01) pF and (121.67 ± 0.02) pF, respectively. At −5 V reverse bias, the dark current densities of the diodes were measured to be (347.2 ± 0.4) mA cm−2 and (189.0 ± 0.2) mA cm−2, respectively. The Schottky barrier heights of the devices (0.52 ± 0.07) eV and (0.63 ± 0.09) eV, respectively, were extracted from the forward dark current characteristics.

Item Type:	Article
Keywords:	X-ray, GaN, Photodiode, Semiconductor
Schools and Departments:	School of Engineering and Informatics > Engineering and Design
Subjects:	Q Science > QC Physics
Depositing User:	Tina Gohil
Date Deposited:	13 Jul 2016 10:40
Last Modified:	07 Mar 2017 04:39
URI:	http://srodev.sussex.ac.uk/id/eprint/62001

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