Temperature dependence of an AlInP 63Ni betavoltaic cell

Butera, S, Lioliou, G, Krysa, A B and Barnett, A M (2016) Temperature dependence of an AlInP 63Ni betavoltaic cell. Journal of Applied Physics, 120. pp. 144501-1. ISSN 0021-8979

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In this paper, the performance of an Al0.52In0.48P 63 Ni radioisotope cell is reported over the temperature range of −20 °C to 140 °C. A 400 μm diameter p+-i-n+ (2 μm i-layer) Al0.52In0.48P mesa photodiode was used as a conversion device in a novel betavoltaic cell. Dark current measurements on the Al0.52In0.48P detector showed that the saturation current increased increasing the temperature, while the ideality factor decreased. The effects of the temperature on the key cell parameters were studied in detail showing that the open circuit voltage, the maximum output power, and the internal conversion efficiency decreased when the temperature was increased. At −20 °C, an open circuit voltage and a maximum output power of 0.52 V and 0.28 pW, respectively, were measured.

Item Type: Article
Keywords: AlInP, Betavoltaic, semiconductor
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Subjects: Q Science > QC Physics
Depositing User: Silvia Butera
Date Deposited: 14 Oct 2016 10:01
Last Modified: 07 Mar 2017 18:53
URI: http://srodev.sussex.ac.uk/id/eprint/64717

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