Lioliou, G, Chan, H K, Gohil, T, Vassilevski, K V, Wright, N G, Horsfall, A B and Barnett, A M (2016) 4H-SiC Schottky diode arrays for X-ray detection. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 840. pp. 145-152. ISSN 0168-9002

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Abstract

Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room temperature.
One representative diode was also electrically characterized over the temperature range 20°C to 140 °C. The performance at 30 °C of all five X-ray detectors, in both current mode and for photon counting X-ray spectroscopy was investigated. The diodes were fabricated in an array form such that they could be operated as either a 2×2 or 1×3 pixel array. Although the devices showed double barrier heights, high ideality factors and higher than expected leakage current at room temperature (12 nA/cm2 at an internal electric field of 105 kV/ cm), they operated as spectroscopic photon counting soft X-ray detectors uncooled at 30 °C. The measured energy resolution (FWHM at 17.4 keV, Mo Kα) varied from 1.36 to 1.68 keV among different diodes.

Item Type:	Article
Keywords:	Silicon carbide, Schottky diodes, X-ray spectroscopy, High temperature,
Schools and Departments:	School of Engineering and Informatics > Engineering and Design
Subjects:	Q Science > QB Astronomy Q Science > QC Physics
Depositing User:	Grammatiki Lioliou
Date Deposited:	17 Oct 2016 11:02
Last Modified:	06 Mar 2017 23:29
URI:	http://srodev.sussex.ac.uk/id/eprint/64783

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