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Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators

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Version 2 2023-06-22, 13:10
Version 1 2023-06-09, 04:27
journal contribution
posted on 2023-06-22, 13:10 authored by Alwin Daus, Christian Vogt, Niko Munzenrieder, Luisa Petti, Stefan Knobelspies, Giuseppe Cantarella, Mathieu Luisier, Giovanni A Salvatore, Gerhard Tröster
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History

Publication status

  • Published

File Version

  • Published version

Journal

Journal of Applied Physics

ISSN

0021-8979

Publisher

AIP Publishing

External DOI

Issue

24

Volume

120

Page range

244501

Department affiliated with

  • Engineering and Design Publications

Research groups affiliated with

  • Sensor Technology Research Centre Publications

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2017-01-03

First Open Access (FOA) Date

2017-01-03

First Compliant Deposit (FCD) Date

2016-12-30

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    All Rights Reserved

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