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Direct growth of ZnSe and CdSe on (100) InAs substrates

journal contribution
posted on 2023-06-09, 05:30 authored by Silvia Butera, Richard T Moug, Peter Vines, Gerald S Buller, Kevin A Prior
ZnSe and CdSe layers have been grown on InAs substrates using molecular beam epitaxy (MBE) without the need for a III-V and II-VI dual chamber system. This paper reports on the optimisation of a chemical oxide removal process using sulphur passivation. This removes the need for conventional in vacuo oxide removal under As overpressure that is used to prevent the formation of high densities of In droplets. X-ray and photoluminescence characterisation of the samples confirms single crystal growth.

History

Publication status

  • Published

Journal

Physica Status Solidi (C)

ISSN

1862-6351

Publisher

Wiley

Issue

7-8

Volume

11

Page range

1210-1212

Department affiliated with

  • Engineering and Design Publications

Full text available

  • No

Peer reviewed?

  • Yes

Legacy Posted Date

2017-03-17

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