Daus TED accsepted.pdf (6.83 MB)
Charge trapping mechanism leading to sub-60-mV/decade-Swing FETs
journal contribution
posted on 2023-06-09, 06:51 authored by Alwin Daus, Christian Vogt, Niko Munzenrieder, Luisa Petti, Stefan Knobelspies, Giuseppe Cantarella, Mathieu Luisier, Giovanni A Salvatore, Gerhard TrosterIn this work, we present a novel method to reduce the subthreshold swing of field-effect transistors below 60 mV/dec. Through modeling, we directly relate trap charge movement between the gate electrode and the gate dielectric to subthreshold swing reduction. We experimentally investigate the impact of charge exchange between a Cu gate electrode and a 5 nm thick amorphous Al2O3 gate dielectric in an InGaZnO4 thin-film transistor. Positive trap charges are generated inside the gate dielectric while the semiconductor is in accumulation. During the subsequent de-trapping, the subthreshold swing diminishes to a minimum value of 46 mV/dec at room temperature. Furthermore, we relate the charge trapping/de-trapping effects to a negative capacitance behavior of the Cu/Al2O3 metal-insulator structure.
History
Publication status
- Published
File Version
- Accepted version
Journal
IEEE Transactions on Electron DevicesISSN
0018-9383Publisher
Institute of Electrical and Electronics EngineersExternal DOI
Issue
7Volume
64Page range
2789-2796Department affiliated with
- Engineering and Design Publications
Research groups affiliated with
- Sensor Technology Research Centre Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2017-06-21First Open Access (FOA) Date
2017-06-21First Compliant Deposit (FCD) Date
2017-06-21Usage metrics
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