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Investigation of a temperature tolerant InGaP (GaInP) converter layer for a 63Ni betavoltaic cell

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posted on 2023-06-09, 07:31 authored by Silvia Butera, Michael WhitakerMichael Whitaker, A B Krysa, Anna BarnettAnna Barnett
A prototype InGaP p+–i–n+ mesa photodiode was studied for its potential as the energy conversion device in a 63Ni betavoltaic cell; its electrical performance was analysed across the temperature range -20 °C to 100 °C. The results show that the InGaP detector when illuminated with a laboratory 63Ni radioisotope beta particle source had a maximum output power of 0.92 pW at -20 °C, this value decreased at higher temperatures. A decrease in the open circuit voltage and in the cell internal conversion ef ciency were also observed when the temperature was increased: at -20 °C, the open circuit voltage and the cell internal conversion ef ciency had values of 0.69 V and 4%, respectively. A short circuit current of 4.5 pA was measured at -20 °C.

Funding

STFC; ST/P001815/1

High Efficiency Betavoltaic Cells; G1455; STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCIL; ST/M002772/1

History

Publication status

  • Published

File Version

  • Published version

Journal

Journal of Physics D: Applied Physics

ISSN

0022-3727

Publisher

IOP Publishing

Volume

50

Page range

345101

Department affiliated with

  • Engineering and Design Publications

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2017-08-02

First Open Access (FOA) Date

2017-08-02

First Compliant Deposit (FCD) Date

2017-08-02

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