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Investigation of a temperature tolerant InGaP (GaInP) converter layer for a 63Ni betavoltaic cell
journal contribution
posted on 2023-06-09, 07:31 authored by Silvia Butera, Michael WhitakerMichael Whitaker, A B Krysa, Anna BarnettAnna BarnettA prototype InGaP p+–i–n+ mesa photodiode was studied for its potential as the energy conversion device in a 63Ni betavoltaic cell; its electrical performance was analysed across the temperature range -20 °C to 100 °C. The results show that the InGaP detector when illuminated with a laboratory 63Ni radioisotope beta particle source had a maximum output power of 0.92 pW at -20 °C, this value decreased at higher temperatures. A decrease in the open circuit voltage and in the cell internal conversion ef ciency were also observed when the temperature was increased: at -20 °C, the open circuit voltage and the cell internal conversion ef ciency had values of 0.69 V and 4%, respectively. A short circuit current of 4.5 pA was measured at -20 °C.
Funding
STFC; ST/P001815/1
High Efficiency Betavoltaic Cells; G1455; STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCIL; ST/M002772/1
History
Publication status
- Published
File Version
- Published version
Journal
Journal of Physics D: Applied PhysicsISSN
0022-3727Publisher
IOP PublishingExternal DOI
Volume
50Page range
345101Department affiliated with
- Engineering and Design Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2017-08-02First Open Access (FOA) Date
2017-08-02First Compliant Deposit (FCD) Date
2017-08-02Usage metrics
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