InGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy

Butera, S, Lioliou, G, Krysa, A B and Barnett, A M (2017) InGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy. Scientific Reports, 7. p. 10206. ISSN 2045-2322

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In this paper, for the first time an InGaP (GaInP) photon counting X-ray photodiode has been developed and shown to be suitable for photon counting X-ray spectroscopy when coupled to a low-noise charge-sensitive preamplifier. The characterisation of two randomly selected 200 μm diameter and two randomly selected 400 μm diameter In0.5Ga0.5P p+-i-n+ mesa photodiodes is reported; the i-layer of the p+-i-n+ structure was 5 μm thick. At room temperature, and under illumination from an 55Fe radioisotope X-ray source, X-ray spectra were accumulated; the best spectrometer energy resolution (FWHM) achieved at 5.9 keV was 900 eV for the 200 μm In0.5Ga0.5P diameter devices at reverse biases above 5 V. System noise analysis was also carried out and the different noise contributions were computed.

Item Type: Article
Keywords: InGaP, X-ray, photon-counting spectroscopy, semiconductor
Schools and Departments: School of Engineering and Informatics > Engineering and Design
Subjects: Q Science > QC Physics
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Depositing User: Silvia Butera
Date Deposited: 11 Sep 2017 10:00
Last Modified: 07 Feb 2018 12:43

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Project NameSussex Project NumberFunderFunder Ref
In situ X-ray Fluorescence Spectroscopy for Deep Sea Mining ApplicationsG1537STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCILST/M004635/1
UnsetUnsetRoyal SocietyRS130515