Butera, S, Lioliou, G, Krysa, A B and Barnett, A M (2017) InGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy. Scientific Reports, 7. p. 10206. ISSN 2045-2322

PDF - Published Version Available under License Creative Commons Attribution. Download (1MB)

Abstract

In this paper, for the first time an InGaP (GaInP) photon counting X-ray photodiode has been developed and shown to be suitable for photon counting X-ray spectroscopy when coupled to a low-noise charge-sensitive preamplifier. The characterisation of two randomly selected 200 μm diameter and two randomly selected 400 μm diameter In0.5Ga0.5P p+-i-n+ mesa photodiodes is reported; the i-layer of the p+-i-n+ structure was 5 μm thick. At room temperature, and under illumination from an 55Fe radioisotope X-ray source, X-ray spectra were accumulated; the best spectrometer energy resolution (FWHM) achieved at 5.9 keV was 900 eV for the 200 μm In0.5Ga0.5P diameter devices at reverse biases above 5 V. System noise analysis was also carried out and the different noise contributions were computed.

Item Type:	Article
Keywords:	InGaP, X-ray, photon-counting spectroscopy, semiconductor
Schools and Departments:	School of Engineering and Informatics > Engineering and Design
Subjects:	Q Science > QC Physics
Related URLs:	Publisher
Depositing User:	Silvia Butera
Date Deposited:	11 Sep 2017 10:00
Last Modified:	07 Feb 2018 12:43
URI:	http://srodev.sussex.ac.uk/id/eprint/70079

View download statistics for this item

📧 Request an update