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Gain-tunable complementary common-source amplifier based on a flexible hybrid thin-film transistor technology

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posted on 2023-06-09, 08:23 authored by Luisa Petti, Florin Loghin, Giuseppe Cantarella, Christia Vogt, Niko Munzenrieder, Alaa Abdellah, Markus Becherer, Tobias Haeberle, Alwin Daus, Giovanni Salvatore, Gerhar Troster, Paolo Lugli
In this letter, we report a flexible complementary common-source (CS) amplifier comprising one p-type spray-coated single walled carbon nanotube and one n-type sputtered InGaZnO4 thin-film transistor (TFT). Bottom-gate TFTs were realized on a free-standing flexible polyimide foil using a maximum process temperature of 150 °C. The resulting CS amplifier operates at 10 V supply voltage and exhibits a gain bandwidth product of 60 kHz. Thanks to the use of a p-type TFT acting as a tunable current source load, the amplifier gain can be programmed from 3.5 V/V up to 27.2 V/V (28.7 dB). To the best of our knowledge, this is the highest gain ever obtained for a flexible single-stage CS amplifiers.

History

Publication status

  • Published

File Version

  • Accepted version

Journal

IEEE Electron Device Letters

ISSN

0741-3106

Publisher

IEEE

Issue

11

Volume

38

Page range

1536-1539

Department affiliated with

  • Engineering and Design Publications

Research groups affiliated with

  • Sensor Technology Research Centre Publications

Notes

© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2017-10-23

First Open Access (FOA) Date

2017-10-23

First Compliant Deposit (FCD) Date

2017-10-23

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