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High temperature GaAs X-ray detectors

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journal contribution
posted on 2023-06-09, 09:39 authored by Grammatiki LioliouGrammatiki Lioliou, Michael WhitakerMichael Whitaker, Anna BarnettAnna Barnett
Two GaAs p+-i-n+ mesa X-ray photodiodes were characterized for their electrical and photon counting X-ray spectroscopic performance over the temperature range of 100?°C to –20?°C. The devices had 10?µm thick i layers with different diameters: 200?µm (D1) and 400?µm (D2). The electrical characterization included dark current and capacitance measurements at internal electric field strengths of up to 50?kV/cm. The determined properties of the two devices were compared with previously reported results that were made with a view to informing the future development of photon counting X-ray spectrometers for harsh environments, e.g., X-ray fluorescence spectroscopy of planetary surfaces in high temperature environments. The best energy resolution obtained (Full Width at Half Maximum at 5.9?keV) decreased from 2.00?keV at 100?°C to 0.66?keV at –20?°C for the spectrometer with D1, and from 2.71?keV at 100?°C to 0.71?keV at –20?°C for the spectrometer with D2. Dielectric noise was found to be the dominant source of noise in the spectra, apart from at high temperatures and long shaping times, where the main source of photopeak broadening was found to be the white parallel noise.

Funding

Radioisotope Microbatteries; G1951; STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCIL; ST/P001815/1

In situ X-ray Fluorescence Spectroscopy for Deep Sea Mining Applications; G1537; STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCIL; ST/M004635/1

History

Publication status

  • Published

File Version

  • Published version

Journal

Journal of Applied Physics

ISSN

0021-8979

Publisher

AIP Publishing

Volume

122

Page range

244506

Department affiliated with

  • Engineering and Design Publications

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2018-01-08

First Open Access (FOA) Date

2018-01-08

First Compliant Deposit (FCD) Date

2018-01-08

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