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Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors
conference contribution
posted on 2023-06-09, 11:52 authored by A Daus, S Han, S Knobelspies, G Cantarella, C Vogt, Niko Munzenrieder, G TrosterUltra-thin p-type chalcogenide glass Ge2Sb2Te5 (GST) semiconductor layers are employed to form flexible thin-film transistors (TFTs). For the first time, TFTs based on GST show saturating output characteristics and an ON/OFF ratio up to 388, exceeding present reports by a factor of ~20. The channel current modulation is greatly enhanced by using ultra-thin 5 nm thick amorphous GST layers and 20 nm thick high-k Al2O3 gate dielectrics. Flexible CMOS circuits are realized in combination with the n-type oxide semiconductor InGaZnO4 (IGZO). The CMOS inverters show voltage gain of up to 69. Furthermore, flexible NAND gates are presented. The bending stability is shown for a tensile radius of 6 mm.
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- Published
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- Accepted version
Journal
Electron Devices Meeting (IEDM), 2017 IEEE InternationalISSN
2156-017XPublisher
Institute of Electrical and Electronics EngineersExternal DOI
Page range
8.1.1-8.1.4Event name
Electron Devices Meeting (IEDM), 2017 IEEE InternationalEvent location
San Francisco, CA, USAEvent type
conferenceEvent date
2-6 December 2017Book title
2017 IEEE International Electron Devices Meeting (IEDM)ISBN
9781538635599Department affiliated with
- Engineering and Design Publications
Research groups affiliated with
- Sensor Technology Research Centre Publications
Notes
© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Full text available
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2018-02-01First Open Access (FOA) Date
2018-02-01First Compliant Deposit (FCD) Date
2018-02-01Usage metrics
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