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Flexible InGaZnO TFTs with fmax above 300 MHz

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posted on 2023-06-09, 14:19 authored by Niko Munzenrieder, Koichi Ishida, Tilo Meister, Giuseppe Cantarella, Luisa Petti, Corrado Carta, Frank Ellinger, Gerhard Troster
n this letter, the AC performance and influence of bending on flexible IGZO thin-film transistors, exhibiting a maximum oscillation frequency (maximum power gain frequency) fmax beyond 300 MHz, are presented. Self-alignment was used to realize TFTs with channel length down to 0.5 µm. The layout of this TFTs was optimized for good AC performance. Besides the channel dimensions this includes ground-signal-ground contact pads. The AC performance of this short channel devices was evaluated by measuring their two port scattering parameters. These measurements were used to extract the unity gain power frequency from the maximum stable gain and the unilateral gain. The two complimentary definitions result in fmax values of (304 ± 12)MHz and (398 ± 53) MHz, respectively. Furthermore, the transistor performance is not significantly altered by mechanical strain. Here, fmax reduces by 3.6% when a TFT is bent to a tensile radius of 3.5 mm.

History

Publication status

  • Published

File Version

  • Accepted version

Journal

IEEE Electron Device Letters

ISSN

0741-3106

Publisher

Institute of Electrical and Electronics Engineers

Issue

9

Volume

39

Page range

1310-1313

Department affiliated with

  • Engineering and Design Publications

Research groups affiliated with

  • Sensor Technology Research Centre Publications

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2018-08-01

First Open Access (FOA) Date

2018-08-01

First Compliant Deposit (FCD) Date

2018-07-31

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