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Flexible InGaZnO TFTs with fmax above 300 MHz
journal contribution
posted on 2023-06-09, 14:19 authored by Niko Munzenrieder, Koichi Ishida, Tilo Meister, Giuseppe Cantarella, Luisa Petti, Corrado Carta, Frank Ellinger, Gerhard Trostern this letter, the AC performance and influence of bending on flexible IGZO thin-film transistors, exhibiting a maximum oscillation frequency (maximum power gain frequency) fmax beyond 300 MHz, are presented. Self-alignment was used to realize TFTs with channel length down to 0.5 µm. The layout of this TFTs was optimized for good AC performance. Besides the channel dimensions this includes ground-signal-ground contact pads. The AC performance of this short channel devices was evaluated by measuring their two port scattering parameters. These measurements were used to extract the unity gain power frequency from the maximum stable gain and the unilateral gain. The two complimentary definitions result in fmax values of (304 ± 12)MHz and (398 ± 53) MHz, respectively. Furthermore, the transistor performance is not significantly altered by mechanical strain. Here, fmax reduces by 3.6% when a TFT is bent to a tensile radius of 3.5 mm.
History
Publication status
- Published
File Version
- Accepted version
Journal
IEEE Electron Device LettersISSN
0741-3106Publisher
Institute of Electrical and Electronics EngineersExternal DOI
Issue
9Volume
39Page range
1310-1313Department affiliated with
- Engineering and Design Publications
Research groups affiliated with
- Sensor Technology Research Centre Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2018-08-01First Open Access (FOA) Date
2018-08-01First Compliant Deposit (FCD) Date
2018-07-31Usage metrics
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